METHOD FOR MANUFACTURING POLYSILICON TFT USING CESIUM OXIDE AS ANTI-REFLECTION LAYER

摘要

PURPOSE: A fabrication method of a poly-Si TFT(Thin Film Transistor) is provided to reduce manufacturing costs and to simplify manufacturing processes by using a CeO2 which can be grown at low temperature and has an excellent dielectric constant and a stable structure as an anti-reflection layer. CONSTITUTION: A CeO2 seed(12) is grown on a glass substrate(11) at a low temperature. A poly-Si thin film(14) is deposited on the CeO2 seed(12) at low temperature. A CeO2 film(16) as an ARC(Anti-Reflection Coating) film is coated on the poly-Si film(14). Then, the CeO2 film(16) is crystallized by using an excimer laser or a thermal annealing and is etched. A gate insulating layer(18) is formed on the crystallized poly-Si film(14). After forming an ohmic contact layer(20) on the poly-Si film, a source(22) and a drain(24) are formed on the ohmic contact layer(20).