发明名称 INDIRECTLY HEATED CATHODE STRUCTURE
摘要 PURPOSE: An indirectly heated cathode structure is provided to prevent current leakage between the heater and cathode even at a high temperature of 1400°C or higher. CONSTITUTION: An indirectly heated cathode structure comprises an electron emission member(21) for emitting thermal electron when heated; a base metal(22) including a fixed portion(22a) where the electron emission member is mounted, and a skirt portion(22b) extended downward from an edge of the fixed portion; a heater(23) incorporated into the base metal, and which has a diamond insulation layer(23a) formed at the outer periphery of the heater; and a support member(24) for supporting the heater. The diamond insulation layer has a thickness of 2μm or higher.
申请公布号 KR20010092908(A) 申请公布日期 2001.10.27
申请号 KR20000015575 申请日期 2000.03.27
申请人 SAMSUNG SDI CO., LTD. 发明人 HAN, DONG HUI;KIM, WAN;SEO, DONG GYUN
分类号 H01J1/13;(IPC1-7):H01J1/13 主分类号 H01J1/13
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