发明名称 |
INDIRECTLY HEATED CATHODE STRUCTURE |
摘要 |
PURPOSE: An indirectly heated cathode structure is provided to prevent current leakage between the heater and cathode even at a high temperature of 1400°C or higher. CONSTITUTION: An indirectly heated cathode structure comprises an electron emission member(21) for emitting thermal electron when heated; a base metal(22) including a fixed portion(22a) where the electron emission member is mounted, and a skirt portion(22b) extended downward from an edge of the fixed portion; a heater(23) incorporated into the base metal, and which has a diamond insulation layer(23a) formed at the outer periphery of the heater; and a support member(24) for supporting the heater. The diamond insulation layer has a thickness of 2μm or higher.
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申请公布号 |
KR20010092908(A) |
申请公布日期 |
2001.10.27 |
申请号 |
KR20000015575 |
申请日期 |
2000.03.27 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
HAN, DONG HUI;KIM, WAN;SEO, DONG GYUN |
分类号 |
H01J1/13;(IPC1-7):H01J1/13 |
主分类号 |
H01J1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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