| 摘要 |
PURPOSE: To provide a power semiconductor device which can prevent the thermal breakdown of a power MOSFET when the gate potential of the power MOSFET is not fixed. CONSTITUTION: The power semiconductor device comprises a power MOSFET 11, a series resistor R1 and Zener diode 14 connected between the drain and the source of the power MOSFET 11, a resistor R2 connected between the gate and the source of the power MOSFET 11, and a series resistor R3 and MOS transistor 15 connected between the gate and the source of the power MOSFET 11. The joint of the resistor R1 and the Zener diode 14 is connected to the gate of the MOS transistor 15.
|
