DRY ETCHING DEVICE FOR CONTROLLING PUMPING AREA

摘要

PURPOSE: A dry etching device for controlling a pumping area is provided to reduce a loading effect by controlling variably a pumping area to satisfy an etching target. CONSTITUTION: An upper electrode(120) is installed on an upper portion of a process chamber(110). A lower electrode(175) is installed at a lower portion of the process chamber(110). An RF power is applied to the lower electrode(175). A gas such as Helium is supplied to a bottom portion of the lower electrode(175). A wafer support portion(160) for loading a wafer(160) is installed on an upper portion of the lower electrode(175). A vertical plate(165) is installed at one side of the wafer support portion(160). A buffer support portion(130) is installed on an inner sidewall of the process chamber(110). A buffer(140) is combined with the buffer support portion(130). The buffer(140) is driven by a buffer drive portion(150). A pumping area is formed between a wafer area and a pumping port(180) of the process chamber(110). The pumping port(180) is connected with a pump(190).