| 摘要 |
PURPOSE: To form a barrier layer 55 on the bottom face 54a and the side face 54b of a through hole 54 having a large aspect ratio by sputtering method while ensuring a required thickness. CONSTITUTION: A first Ti film 55a is formed by sputtering while setting a long interval of 350 mm between a semiconductor substrate and a target and then a second Ti film 55b is formed by sputtering at a short interval of 80 mm. Subsequently, a first TiN film 55c is formed thereon by sputtering at a long interval of 350 mm followed by formation of a second TiN film 55d by sputtering at a short interval of 80 mm. Finally, the first and second Ti films 55a, 55b and the first and second TiN films 55c, 55d are combined to form a barrier layer 55. |
