发明名称 MEMORY MODULE
摘要 <p>PROBLEM TO BE SOLVED: To provide a memory module which can simplify a rework step even when a failure is confirmed in a lamination step after a mounting step in which a semiconductor memory device is mounted on a host substrate, and further can simply attain an increase in capacitance even in an elemental module substrate. SOLUTION: This memory module 1 comprises child substrates 5, 5,... which comprise electrodes which are electrically connected to a semiconductor memory device 4 in a marginal part, and also in which a single or plurality of the semiconductor memory devices 4 are mounted; and a module substrate 2 in which the child substrate 5 is mounted, and sockets 3, 3,... which are electrically connected to the electrodes of the marginal part of the child substrate 5 are provided on the surface.</p>
申请公布号 JP2001298153(A) 申请公布日期 2001.10.26
申请号 JP20000111713 申请日期 2000.04.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 TOKUNAGA MUNEHARU;NAKAJIMA TAKAO
分类号 H01L25/10;H01L25/11;H01L25/18;H01R33/76;(IPC1-7):H01L25/10;H01R12/16 主分类号 H01L25/10
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