| 摘要 |
PURPOSE: To provide a solid image pickup device, which can realize arbitrary thin-out rate and can change frame rate, solution or the like easily, by only changing the drive conditions without forming a complicated wiring structure of a vertical transfer electrode. CONSTITUTION: This solid-state image pickup device is provided with a sweep-off rate 8 and a sweep-off drain 9 placed adjacently to the junction part of a vertical CCD 2 and a horizontal CCD 3 and has the structure, by which the charges stored in an arbitrary pixel 1 can be made depleted completely. Reading can be done at an arbitrary thin-out rate only by changing the driving conditions of the weep-off gate 8. A vertical transfer electrode 6 has the same wiring structure as that of a still mode (normal reading), without requiring the conventional complicated wiring structure of a vertical transfer electrode and can realize an arbitrary thin-out rate as well as the easy change of frame rate, solution or the like.
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