发明名称 METHOD AND APPARATUS FOR FILM DEPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a method and an apparatus for film deposition by which a film having the sufficient thickness is deposited on a sidewall of a groove and a hole. SOLUTION: An evaporated substance heated by a plasma beam PB and emitted from a hearth body 53 is ionized by the plasma beam PB, passed through a mesh electrode 80 and deposited on a lower side of a substrate W to form the film. If the suitable voltage is applied to the mesh electrode 80, the evaporated substance introduced in the substrate W can be deflected by the mesh electrode 80 immediately before it is made incident, and the evaporated substance can be uniformly made incident on the substrate W in the distribution of various angular components. This means, even if a shade is formed on the groove or the hole when a hearth 51 is a point-like evaporation source and a straight-moving evaporated substance advances straight, a film having the sufficient thickness similar to that on the periphery thereof can be deposited on the sidewall of the very small groove or the hole formed on the substrate W by means of a simple and space-saved mesh electrode 80.
申请公布号 JP2001295031(A) 申请公布日期 2001.10.26
申请号 JP20000113989 申请日期 2000.04.14
申请人 SUMITOMO HEAVY IND LTD 发明人 MASUI ARATA
分类号 C23C14/32;H01L21/285;(IPC1-7):C23C14/32 主分类号 C23C14/32
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