TUNGSTEN SPUTTERING TARGET AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a high-density, low-cost tungsten sputtering target capable of reducing the occurrence of particles at the time of sputtering and also capable of depositing a sputter film having low resistivity, and its manufacturing method. SOLUTION: The tungsten sputtering target has 5-100 ppm molybdenum(Mo) content. It is more desirable to regulate the above Mo content to 10-50 ppm. Further, it is more desirable to regulate the contents of carbon(C) and oxygen(O) to <=100 ppm respectively.