FORMING METHOD OF POLYCRYSTALLINE SILICON FILM, THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD, AND LIQUID CRYSTAL DISPLAY DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To eliminate difference in film quality of a polysilicon film, in a crystallization process when a low temperature polysilicon TFT is formed. SOLUTION: In the crystallization process in processes for manufacturing TFTs using a polycrystalline silicon film as a semiconductor layer, film is formation is performed by setting the film thickness of an amorphous silicon film to be most suitable when the crystallization process is performed by using energy of a constant laser beam. As a result, change of film quality of the polycrystalline silicon film can be reduced for the irregularity of the film thickness.