| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a spin bulb type magnetoresistance effect element which can realize a high resistance change ratio with reducing the heat treating time. SOLUTION: The element has a laminate structure of a Ta base layer 2, antiferromagnetic layer 3, laminate ferrimagnetic type fixed ferromagnetic layers 5 of 1 mm or more which sandwiches a nonmagnetic layer 4b of 1 mm or less, made of Ru, Rh, etc., Cu conductive layer 6, CoFe and NiFe ferromagnetic layers 7 and Ta protective layer 8 laminated on a substrate 1, and it is heat treated to induce an exchange coupling magnetic field on the interface between the antiferromagnetic layer 3 and the ferromagnetic layer 5, thus fixing the magnetizing direction of the ferromagnetic layer 5 to a fixed point. The antiferromagnetic layer 3 is made of a PtMn type material having a composition of Mn 50 atm.% in the interface with the ferromagnetic layer 5.</p> |
