| 摘要 |
PROBLEM TO BE SOLVED: To reduce a parasitic MOS capacity by efficiently controlling a body electric potential while a leak current is reduced, related to an SOI type MOS transistor with a body contact. SOLUTION: An SOI type MOS transistor with a body contact is provided. Here, to a gate insulating film of a first film thickness which is formed between a body region and a gate region disposed thereon, a parasitic gate insulating film having a second film thickness at least partially thicker than the first film thickness is formed between a parasitic MOS region connected to the end of a body region and separating the body region from a body contact region and a parasitic gate region formed on the parasitic MOS region. The body part is directly connected to the body contact region through the parasitic MOS region under the parasitic gate insulating film of the second film thickness.
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