| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable damascene wiring structure, and a semiconductor device which has such a damascene wiring structure. SOLUTION: This is a damascene wiring structure which has a lower wiring structure, a groove for wiring is made from the top side of an interlayer insulating film, a via hole which reaches as far as the lower wiring structure and has a diameter smaller than the width of the groove for wiring, and an insulating projection pattern which is projecting upward from the bottom of the groove for wiring in the region outside the via hole and is made of the same material as the interlayer insulating film. First area occupation factor in the first region within a groove for wiring near the via hole is higher than whose second area occupation factor away from the via hole, and dual damascene wiring is made to fill the groove for wiring and the via hole. |
