| 摘要 |
PROBLEM TO BE SOLVED: To easily apply a vertical field effect transistor to an LSI by providing a structure in common, highly, with a conventional one in shape and forming process of a source/drain region and a gate electrode. SOLUTION: A conductive path of a semiconductor is arrayed in a fixed direction on an insulator, and source/drain regions are so provided as to face each other in the direction vertical to the array direction of the conductive path. The two source/drain regions are connected with the conductive path, and a gate electrode is provided at the central part of a semiconductor layer constituting each conductive path through an insulating film. A region where a gate electrode is formed through the insulating film on both sides of the semiconductor layer constituting each conductive path, constitutes a channel formation region. The gate electrode is so provided in the array direction of the conductive path as to stride over the central part of a plurality of conductive paths. Related to each conductive path, both sides of the semiconductor layer constituting the conductive path are main continuity path, and the width of each conductive path is wide at a part contacting the source/drain region and narrow near the channel formation region.
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