| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high reliability for a semiconductor laser device under the high output by increasing the COMD level of the light output. SOLUTION: On an n-GaAs substrate 11, an n-GaAs buffer layer 12, n- Ga1-z1Alz1As lower clad layer 13 (0.55<=z1<=0.8), n-In0.49Ga0.51P lower optical guide layer 14, Inx3Ga1-x3As1-y3Py3 quantum well active layer 15 (0<=x3<=0.3, 0<=y3<=0.6), i-In0.49Ga0.51P optical guide layer 16, Inx3Ga1-x3As1-y3Py3 quantum well active layer 17 (0<=x3<=0.3, 0<=y3<=0.6), p-In0.49Ga0.51P upper optical guide layer 18, p-Ga1-z1Alz1As upper clad layer 19, and p-GaAs contact layer 20 are formed. Then, an insulation film 21 is formed on these layers. A stripe of about 50μm in width is removed from the insulation film 21 by the ordinary lithography. Thereafter, a p-side electrode 22 is formed and then the substrate is polished and an n-side electrode 23 is formed.
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