| 摘要 |
PROBLEM TO BE SOLVED: To facilitate condition setting when an object like semiconductor material is subjected to laser annealing for growing crystals. SOLUTION: A thermal conduction equation regarding a silicon film is solve on the basis of not only basic parameter including a central position, disctribution and energy density of a laser beam and overlapping ratio when multiplex laser beam irradiation is performed, but also fluctuation components including the center position and energy density, and growth of crystals in the object is statistically calculated. As a result, estimation of crystal growth wherein a forming process of polycrystal in the silicon film is reflected more precisely is enabled. Hence, efficiency of process design when an Si film is made polysilicon can be improved regarding the time and cost, and high quality and optimization of the obtained polysilicon film formation can be realized. Moreover, efficiency of design of laser annealing equipment can be improved regarding the time and cost, and high performance of the laser annealing equipment can be realized.
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