| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase growth system of a copper thin film by which a copper thin film having good film quality, desired film thickness and few remaining impurities can be deposited at a high film deposition rate with inexpensive chlorine or hydrogen chloride as a gaseous starting material. SOLUTION: This system is provided with a reaction vessel in which substrates to be treated are arranged, an introducing vessel arranged at the inside of the reaction vessel and having an injection board made of copper and provided with a plurality of piercing injection nozzles, a temperature controlling means provided on the injection board made of copper, a gaseous starting material feed tube inserted into the introducing vessel and feeding chlorine or hydrogen chloride, a plasma generating means for generating the plasma of chlorine or hydrogen chloride on the inside of the introducing vessel, an atomic reducing gas generating means for generating atomic reducing gas at least in the vicinity of the substrate to be treated placed in the reaction vessel and an evacuating means for evacuating gas in the reaction vessel and in the introducing vessel.
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