| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the effect of electric-field relaxation is maintained while rising of on resistance in on-state is suppressed. SOLUTION: N+ type diffusion regions 6a-6d as well as P- type diffusion region 5a and the like are formed on the surface and its vicinity of an N- type epitaxial layer 2 on a p-type silicon substrate 1. Gate electrodes 8a and 8b are formed on the P- type diffusion region 5a positioned between the N+ type diffusion regions 6a and 6b and the N- type epitaxial layer 2 through a gate insulating film. A source electrode 9 and a drain electrode 10 are respectively formed. Under a field separation film 14, a P type diffusion region 7 is discretely formed in the direction across the direction where a current flows in on-state. |
