| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element, the emitted light wavelength of which has small dependance on radiation angle, and a method of manufacturing the same. SOLUTION: A DBR (a multilayer reflection film) 3 and a light-emitting layer 5 thereon consisting of a plurality of AlyGazIn1-y-zP (0<=y<=1, 0<=z<=1) layers are formed on a GaAs substrate 1. On the light-emitting layer 5, a plurality of semiconductor layer 6-10 having at least one layer are formed. On the surface of the semiconductor layer 9, a lattice pattern that scatters the light is formed by photolithography and etching with a sulfuric-acid/hydrogen-peroxide based etchant. |
