AN EPITAXIAL SILICON WAFER WITH INTRINSIC GETTERING AND A METHOD FOR THE PREPARATION THEREOF,申请号KR1020017005942-传众专利搜索

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发明名称	AN EPITAXIAL SILICON WAFER WITH INTRINSIC GETTERING AND A METHOD FOR THE PREPARATION THEREOF
摘要
申请公布号	KR20010092733(A)	申请公布日期	2001.10.26
申请号	KR1020017005942	申请日期	2001.05.11
申请人		发明人
分类号	H01L21/20	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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