| 摘要 |
PROBLEM TO BE SOLVED: To provide a high breakdown strength and low on-resistance. SOLUTION: There are provided a gate electrode 9 formed on a semiconductor substrate 1 through a gate insulating film 8, an LP layer 5 (P type body region) so formed as to adjoin the gate electrode 9, an N type source region 10 and a channel region 12 formed in the LP layer 5, an N type drain region 11 formed away from the LP layer 5, and an LN layer 4 (drift region) so formed as to enclose the drain region 11. The LP layer 5 is formed nearer to the drain region 11 than to the active region under the gate electrode 9 while an SLN layer 6 is formed from the drain region 11 to the region just before the active region. |
