| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a semiconductor device which can perform good SAC etching, without vanishing the etching stopper film in SAC etching, even in case that the thickness of a film for etching until start of etching is thick. SOLUTION: A conductive plug 2, an interlayer insulating film 6a, and a bit line 3 are made on a silicon substrate 1. The bit line 3 is covered with etching stopper films 4 and 5. Then, an interlayer insulating film 6b and an etching stopper film 10 of about 20-70 nm which is easy to take selectivity ratio to a storage node interlayer insulating film 9 are made, and the Storage node interlayer insulating film 9 is grown. With a resist pattern 7b as a mask, the etching of the storage node interlayer insulating film 9 is performed to the stopper film 10. SAC etching is performed to a bit line 3 without changing the mask so as to form a contact hole to the conductive plug 2. |
