EXCHANGE COUPLING FILM, MAGNETORESISTIVE EFFECT ELEMENT BY USE THERE OF, AND THIN FILM MAGNETIC HEAD BY USE OF MAGNETORESISTIVE EFFECT ELEMENT

摘要

PROBLEM TO BE SOLVED: To solve a problem in which a magnetoresistive effect device of conventional structure is not capable of realizing a large resistance change rate and a large exchange coupling magnetic field. SOLUTION: A region in which a ratio X:Mn shown in at.% increases gradually toward a stationary magnetic layer 3, stating from an intermediate region in the direction of thickness and another region in which a ratio X:Mn shown in at.% increases gradually toward the side opposite to the stationary magnetic layer 3, starting from an intermediate region in the direction of thickness reside in an antiferromagnetic layer 4. At least the crystal structure of a part of the antiferromagnetic layer 4 is a face-centered cubic lattice of CuAu-I type, and a part of an interface between the antiferromagnetic layer 4 and the stationary magnetic layer 3 is in a mismatched state. By this setup, a large exchange coupling magnetic field can be obtained.