CRYSTALLINE SILICON THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a crystalline silicon thin film which is uniformly formed extending over its large area and is high in quality while a low-cost glass substrate is used for forming the thin film. SOLUTION: This crystalline silicon thin film is a crystalline silicon thin film formed on a transparent oxide conducting layer formed on a glass substrate utilizing a vapor phase deposition and the thin film is characterized in that a majority of crystal grains contained in the thin film are orientated in such a way as to have a crystallographic face (110) in almost parallel to the surface of the thin film and the ratio of (220)/(111) which is represented as the ratio of a diffraction intensity to a diffraction intensity from a crystallographic face (220) and a crystallographic face (111) in an X-ray diffraction due to the film is 1 to 100 or more.