| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that distortion is generated in crystal layers which are grown with a mismatched crystal lattice structure in the interface in a semiconductor device, this distortion causes a defect of dislocation, and undesirable changes are caused in the electrical characteristics and optical characteristics of the crystal structure. SOLUTION: A semiconductor device with an interface between lattice mismatching crystals is manufactured in an edge grown heteroepitaxy from a crystal having a small area to reduce distortion of the crystal due to a mismatching of the crystal, and a crystal reduced in defect of the dislocation in the crystal is realized. Moreover, mismatched crystal lattices are deposited on a deformable thin film consisting of a semiconductor material to reduce the distortion when the crystal is grown and the defect of distortion is reduced to realize a monolithic crystal structure.
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