| 摘要 |
PROBLEM TO BE SOLVED: To manufacture multilayer films having a low permittivity. SOLUTION: Chemical vapor deposition processes produce films having low permittivity when suitable chemical precursors are utilized. Preferred chemical precursors include siloxanes, (fluoroalkyl)flourosiloxanes, (fluoroalkyl)silanes, (alkyl)fluorosilanes, (fluoroalkyl)fluorosilanes, alkysiloxysilanes, alkoxysilanes, alkylalkoxysilanes, silylmethanes, alkoxysilylmethanes, alkylalkoxysilymethanes, alkoxymethanes, alkyalkoxymethanes, and mixtures thereof. The precursors are particularly suited to thermal CVD for producing low permittivity films at relatively low temperature without the use of additional oxidizing agents. Such films are useful in the microelectronics industry. |
