| 摘要 |
PROBLEM TO BE SOLVED: To allow various effects to be reflected on simulation calculation without causing increased calculation time or degraded convergence characteristics. SOLUTION: Simulation is performed for electric characteristics with the thickness of an insulating film of an MIS semiconductor as a parameter. Here, there are provided a process (S101-S102) where an error between a reference value for relationship between a gate voltage and a drain current of the MIS semiconductor and a simulation calculation result is functionalized in advance with a relationship between the gate voltage and the thickness of insulating film, and a process (S103-S104) where, when simulating the electric characteristics at a specified film thickness of the insulating film of the MIS semiconductor, a drain current at a specified gate voltage is calculated as a drain current acquired through simulation at the film thickness of the insulating film at the specified gate voltage acquired with that function.
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