| 摘要 |
PROBLEM TO BE SOLVED: To provide method and apparatus for manufacturing a semiconductor application device and method and apparatus for inspecting/analyzing a semiconductor application device, in which the cause of electrical defect in the semiconductor application device product can be localized in a short period while lessening the burden on a device designer and inspection can be carried out effectively as compared with a conventional TEG while reducing the cost. SOLUTION: A photoresist 13 is formed on a layer 12 to be machined. Nonsensitized part of the photoresist 13 is removed after exposure through development and cleaning. The photoresist 13 is exposed by UV-rays or X-rays using a mask 3 for forming a complete circuit applied tightly with a shielding material 4a in a specified region thereof on the light source side. Consequently, a pattern transfer part 13a and a nonsensitized part 13b exist in the photoresist 13. Subsequently, the nonsensitized part 13b of the photoresist 13 is removed through development and cleaning, and the layer 12 to be machined is etched using the pattern transfer part 13a of the photoresist 13 as a mask.
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