发明名称 SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target for deposition of a seed layer, with which the size of magnetic particles in a magnetic film can be refined and simultaneously the size of the magnetic particles can be uniformized, and its manufacturing method. SOLUTION: The sputtering target contains CoO crystal grains and crystal grains of divalent to tetravalent oxides, and respective crystal grains gather densely and are uniformly mixed and dispersed. This sputtering target can be manufactured by selecting CoO powder and at least one or more kinds among powder of Si oxide, such as SiO2 and SiO, powder of Ti oxide, such as TiO2, Ti2O3 and TiO3, powder of Ca oxide, such as CaO and CaO2, and powder of zinc oxide such as ZnO and subjecting these powders to ball mill kneading, drying, compacting and sintering.
申请公布号 JP2001295037(A) 申请公布日期 2001.10.26
申请号 JP20000121057 申请日期 2000.04.17
申请人 HITACHI LTD 发明人 SAITO YUKIO;NAMEKAWA TAKASHI;NAITO TAKASHI;SUZUKI YASUTAKA;NAKAZAWA TETSUO;YAMAMOTO HIROTAKA;HONDA MITSUTOSHI;KOZONO YUZO;HIRANO TATSUMI
分类号 C01G51/00;C01B33/20;C01B33/24;C23C14/34;G11B5/84;(IPC1-7):C23C14/34 主分类号 C01G51/00
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