发明名称 METHOD FOR IMPROVING CONTACT RESISTANCE OF SILICIDE LAYER IN A SEMICONDUCTOR DEVICE
摘要 A manufacturing method of semiconductor device of the present invention improves the contact resistance at silicide film while preventing junction region from being damaged, by simple process performed after contact etch. The method comprises a first step for forming an insulating film over a semiconductor substrate having, at least, silicide film at one part and junction region at another part; a second step for selectively etching the insulating film so as to expose both the silicide film and the junction region, in which a side effective film is undesirably formed on the silicide film and a third step for processing by plasma using inert element (e.g. Ar) containing gas in order to remove the side effective film ion the silicide film.
申请公布号 US2001034136(A1) 申请公布日期 2001.10.25
申请号 US19990336712 申请日期 1999.06.21
申请人 KIM YIL WOOK;KIM JAE YOUNG 发明人 KIM YIL WOOK;KIM JAE YOUNG
分类号 H01L21/28;H01L21/027;H01L21/311;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01L21/28
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