| 摘要 |
A semiconductor device is produced by forming a gate electrode on a semiconductor substrate, and by then forming source/drain regions by an ion implantation using the gate electrode as a mask. A suicide film is formed on at least the surface of the gate electrode. In one aspect of the invention, the ion implantation is performed by controlling a tungsten dose in a range from 0 to 5x109 atom/cm2. In another aspect of the invention, the ion implantation is performed by controlling tungsten concentration in the gate electrode ion to fall in a range from 0 to 3x1014 atom/cm3.
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