发明名称 IMPROVED BURN-IN TEST MODE ENTRY APPARATUS OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: An improved burn-in test mode entry apparatus of a semiconductor device is provided to prevent an entry process of a burn-in test mode in a unstable state by sensing a substrate bias voltage level. CONSTITUTION: A substrate bias voltage level detection portion(110) is used for comparing a substrate bias voltage level branched from a substrate bias voltage generator with a reference voltage level and outputting a disable signal according to the compared result. A switching portion(120) is switched by the disable signal of the substrate bias voltage level detection portion(110). A burn-in test mode detection portion(130) is used for detecting an external control signal and outputting a burn-in test mode enable signal. A burn-in test mode drive portion(140) is used for driving a burn-in test mode according to the burn-in test mode enable signal of the burn-in test mode detection portion(130).
申请公布号 KR100313934(B1) 申请公布日期 2001.10.25
申请号 KR19980019836 申请日期 1998.05.29
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 YOON, HYEOK SU
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项
地址