发明名称 |
IMPROVED BURN-IN TEST MODE ENTRY APPARATUS OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: An improved burn-in test mode entry apparatus of a semiconductor device is provided to prevent an entry process of a burn-in test mode in a unstable state by sensing a substrate bias voltage level. CONSTITUTION: A substrate bias voltage level detection portion(110) is used for comparing a substrate bias voltage level branched from a substrate bias voltage generator with a reference voltage level and outputting a disable signal according to the compared result. A switching portion(120) is switched by the disable signal of the substrate bias voltage level detection portion(110). A burn-in test mode detection portion(130) is used for detecting an external control signal and outputting a burn-in test mode enable signal. A burn-in test mode drive portion(140) is used for driving a burn-in test mode according to the burn-in test mode enable signal of the burn-in test mode detection portion(130).
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申请公布号 |
KR100313934(B1) |
申请公布日期 |
2001.10.25 |
申请号 |
KR19980019836 |
申请日期 |
1998.05.29 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO., LTD. |
发明人 |
YOON, HYEOK SU |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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