A plasma processing apparatus for plasma processing using a high-density plasma and adaptable to finer microfabrication comprise an electrode plate provided with an upper electrode having a dielectric member or a cavity and a lower electrode serving as a susceptor and opposed to the upper electrode. The size and dielectric constant of the dielectric member are determined so that resonance may be caused by the frequency of high-frequency power fed to the central portion of the back of the electrode and that the electric field is perpendicular to the electrode plate may be produced so as to reduce the uneveness of the distribution of the electric field over the top surface of the electrode.
申请公布号
WO0180297(A1)
申请公布日期
2001.10.25
申请号
WO2001JP03245
申请日期
2001.04.16
申请人
TOKYO ELECTRON LIMITED;HIMORI, SHINJI;TAKAHASHI, TOSHIKI;KOMATSU, TAKUMI