发明名称 |
Film forming method and semiconductor device |
摘要 |
There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.
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申请公布号 |
US2001034140(A1) |
申请公布日期 |
2001.10.25 |
申请号 |
US20000742242 |
申请日期 |
2000.12.22 |
申请人 |
CANON SALES CO., INC. |
发明人 |
SHIOYA YOSHIMI;KOTAKE YUICHIRO;YAMAMOTO YOUICHI;SUZUKI TOMOMI;IKAKURA HIROSHI;OHGAWARA SHOJI;OHIRA KOUICHI;MAEDA KAZUO |
分类号 |
C23C16/30;C23C16/40;H01L21/31;H01L21/311;H01L21/312;H01L21/314;H01L21/316;H01L21/768;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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