| 摘要 |
In a semiconductor-laser device: an n-type cladding layer, an optical-waveguide layer, an Inx3Ga1-x3As1-y3Py3 compressive-strain quantum-well active layer (0<x3<=0.4, 0<=y3<=0.1), an optical-waveguide layer, a p-Inx6Ga1-x6P etching-stop layer (0<=x6<=1), a p-Inx1Ga1-x1As1-y1Py1 etching-stop layer (0<=x1<=0.4, 0<=y1<=0.5), a p-InxGa1-xP layer (x=0.49±0.01), and an n-InxGa1-xP current-confinement layer are formed on an n-GaAs substrate. A stripe groove is formed down to the depth of the upper surface of the p-Inx6Ga1-x6P etching-stop layer. A p-Inx4Ga1-x4As1-y4Py4 cladding layer (x4=0.49y4±0.01, x-0.04<=x4<=x-0.01) is formed over the current-confinement layer and the stripe groove. A p-type contact layer is formed on the p-Inx4Ga1-x4As1-y4PY4 cladding layer. The absolute value of the product of the strain and the thickness of the active layer does not exceed 0.25 nm, and each of the above layers other than the active layer and the etching-stop layers lattice-matches with GaAs.
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