POLYCRYSTALLINE SILICON GERMANIUM FILMS FOR FORMING MICRO-ELECTROMECHANICAL SYSTEMS

摘要

This invention relates to micro-electromechanical systems using silicon-germanium films. The invention features a process for forming a micro-electromechanical system on a substrate. This process includes depositing a sacrificial layer of silicon-germanium onto the substrate; depositing a structural layer of silicon-germanium onto the sacrificial layer, where the germanium content of the sacrificial layer is greater than the germanium content of the structural layer; and removing a portion of the sacrificial layer. A MEMS resonator (105) as seen in figure 1B can be produced by the present invention.