发明名称 Semiconductor device and method of manufacturing the same
摘要 Disclosed herein is a semiconductor device that comprises a semiconductor substrate and a semiconductor substrate and a wiring layer. The wiring is formed on the semiconductor substrate and has a first region and a second region. The first region comprises a conductive film and an insulating film formed by oxidizing a film of the same material as the conductive film and connected to the conductive film. The second region is provided on the first region and includes a wiring. The Gibbs free energy of the wiring decreases less than that of the conductive film when the wiring and conductive film are oxidized.
申请公布号 US2001033023(A1) 申请公布日期 2001.10.25
申请号 US20010817271 申请日期 2001.03.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SUGURO KYOICHI
分类号 H01L21/302;H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L29/43;H01L21/476 主分类号 H01L21/302
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