发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
Disclosed herein is a semiconductor device that comprises a semiconductor substrate and a semiconductor substrate and a wiring layer. The wiring is formed on the semiconductor substrate and has a first region and a second region. The first region comprises a conductive film and an insulating film formed by oxidizing a film of the same material as the conductive film and connected to the conductive film. The second region is provided on the first region and includes a wiring. The Gibbs free energy of the wiring decreases less than that of the conductive film when the wiring and conductive film are oxidized.
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申请公布号 |
US2001033023(A1) |
申请公布日期 |
2001.10.25 |
申请号 |
US20010817271 |
申请日期 |
2001.03.27 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGURO KYOICHI |
分类号 |
H01L21/302;H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L29/43;H01L21/476 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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