发明名称 |
Methods of forming self-aligned contact pads on electrically conductive lines |
摘要 |
Self aligned contact pads in a semiconductor device and a method for forming thereof wherein etching back process is carried out on the contact pad comprising material and insulating layer down to the top surface of a capping layer of a gate electrode, and also portions of the capping layer is selectively etched with respect to the contact pad composing material at the end of the etching back process and thereby forming the contact pads to be electrically separated from each other. SAC is opened by etching insulating layer selectively to the capping layer using SAC gate mask. A conductive material as for SAC pad is deposited over the insulating layer to fill the SAC opening. Etching back process is carried out to form the SAC pad.
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申请公布号 |
US2001034100(A1) |
申请公布日期 |
2001.10.25 |
申请号 |
US20010892125 |
申请日期 |
2001.06.26 |
申请人 |
LEE JAE-GOO;CHO CHANG-HYUN |
发明人 |
LEE JAE-GOO;CHO CHANG-HYUN |
分类号 |
H01L21/28;H01L21/311;H01L21/3213;H01L21/60;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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