发明名称 Semi conductor has structure suppresses a rise in the transmission resistance
摘要 The semiconductor has a. N+ diffuser region (6a-6d)on a substrate (1) Of p-silicon with an N- epitaxial layer (2). Gate electrodes are formed (8a-8b) with a gate insulator in between. Further layers form a source electrode (9) and a drain electrode (10). Under a field isolating film (14) is a P-Diffusion layer (7).
申请公布号 DE10054636(A1) 申请公布日期 2001.10.25
申请号 DE2000154636 申请日期 2000.11.03
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO 发明人 TERASHIMA, TOMOHIDE
分类号 H01L29/73;H01L21/331;H01L21/8234;H01L27/04;H01L27/088;H01L29/06;H01L29/10;H01L29/739;H01L29/76;H01L29/78 主分类号 H01L29/73
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