发明名称 |
Semi conductor has structure suppresses a rise in the transmission resistance |
摘要 |
The semiconductor has a. N+ diffuser region (6a-6d)on a substrate (1) Of p-silicon with an N- epitaxial layer (2). Gate electrodes are formed (8a-8b) with a gate insulator in between. Further layers form a source electrode (9) and a drain electrode (10). Under a field isolating film (14) is a P-Diffusion layer (7). |
申请公布号 |
DE10054636(A1) |
申请公布日期 |
2001.10.25 |
申请号 |
DE2000154636 |
申请日期 |
2000.11.03 |
申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO |
发明人 |
TERASHIMA, TOMOHIDE |
分类号 |
H01L29/73;H01L21/331;H01L21/8234;H01L27/04;H01L27/088;H01L29/06;H01L29/10;H01L29/739;H01L29/76;H01L29/78 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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