发明名称 |
Method of fabricating a wide-based box- structured capacitor containing hemi-spherical grains |
摘要 |
A method of fabricating a wide-based boxed-structured capacitor containing hemi-spherical silicon grains. A substrate is provided with a source/drain and a first dielectric layer is formed on the substrate with a node contact opening. Then a doped polysilicon layer and a doped amorphous silicon layer are formed sequentially on the first dielectric layer. An etching step is performed to etch the doped amorphous silicon layer and the doped polysilicon layer and a wide-based lower electrode is formed by adjusting flow speeds of chlorine and of hydrogen bromide. Hemi-spherical silicon grains are formed on the surface of the doped amorphous silicon layer in the lower electrode. A second dielectric layer and an upper electrode are formed sequentially on the lower electrode and the capacitor is completed.
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申请公布号 |
US2001032994(A1) |
申请公布日期 |
2001.10.25 |
申请号 |
US20010853004 |
申请日期 |
2001.05.09 |
申请人 |
CHERN HORNG-NAN |
发明人 |
CHERN HORNG-NAN |
分类号 |
H01L21/02;H01L21/768;H01L21/8242;(IPC1-7):H01L29/00;H01L29/76;H01L27/108;H01L21/20;H01L29/94 |
主分类号 |
H01L21/02 |
代理机构 |
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地址 |
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