| 摘要 |
<p>The invention relates to gas analysis and can be used for solving ecological problems and includes a method for determining the concentration of detrimental impurities and an analyzer. The inventive method consists in using a semiconductor sensor fitted with selective a sensible layer. The analyzer comprises the sensor fitted with selective sensible layer and is provided with an additional chamber with a sensor. Each chamber is embodied in the form of an easily replaceable block. A sensor for determining the concentration of oxidizing gases impurities is used in one chamber. Said sensor is fitted with a sensitive layer based on In2O3 modified by an additive of at least one of the following oxides α-Fe2O3, η-Fe2O3, Ga2O3, Sm2O3. A sensor for measuring the concentration of reducing gases impurities is used in another chamber and fitted with a sensitive layer based on In2O3 modified by the additives of Ga2O3 and Au. The impurity concentration ranges between 0.5 and 3.0 mol. %. The sensor's service temperature ranges between 200 to 350 °C. The invention increases the number of measured gas impurities and improves determination sensitivity and selectivity.</p> |
