METHOD FOR SELECTIVE DETERMINATION OF THE CONCENTRATION OF DETRIMENTAL IMPURITIES AND DEVICE FOR CARRYING OUT SAID METHOD

摘要

The invention relates to gas analysis and can be used for solving ecological problems and includes a method for determining the concentration of detrimental impurities and an analyzer. The inventive method consists in using a semiconductor sensor fitted with selective a sensible layer. The analyzer comprises the sensor fitted with selective sensible layer and is provided with an additional chamber with a sensor. Each chamber is embodied in the form of an easily replaceable block. A sensor for determining the concentration of oxidizing gases impurities is used in one chamber. Said sensor is fitted with a sensitive layer based on In2O3 modified by an additive of at least one of the following oxides alpha -Fe2O3, gamma -Fe2O3, Ga2O3, Sm2O3. A sensor for measuring the concentration of reducing gases impurities is used in another chamber and fitted with a sensitive layer based on In2O3 modified by the additives of Ga2O3 and Au. The impurity concentration ranges between 0.5 and 3.0 mol. %. The sensor's service temperature ranges between 200 to 350 DEG C. The invention increases the number of measured gas impurities and improves determination sensitivity and selectivity.