METHOD FOR MANUFACTURING FERROELECTRIC IN SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a ferroelectric in a semiconductor memory device is provided to increase lifetime of FeRAM cells by removing fatigue of a reference cell. CONSTITUTION: In a semiconductor memory device comprising a plurality of ferroelectric memory cells(40) and reference cells, a ferroelectric is fabricated by the following steps. Zirconium n-butoxide and titanium iso-propoxide are melted in 2-methyl oxythenol. The 2-methyl oxythenol is treated by chelating. Lanthanum iso-proxide is added in the sample. After refluxing the sample, Pb acetate trihydrate is added. The sample is stirred using nitric acid as catalyst, spin-coated and annealed, thereby forming the ferroelectric.