Photoresist composition for resist flow process

摘要

A photoresist composition comprises a photoresist resin, a photoacid generator and a solvent, wherein the resin comprises a mixture or two (or more) polymers. The resin typically comprises (a) a first copolymer comprising a compound of formula 1 and (b) a second copolymer comprising a compound or formula 2. The mixture or first copolymer (a) and second copolymer (b) undergo a cross-linking reaction, which prevents a contact hole collapsing due to overflow, a problem which is observed during a conventional resist flow process. Photoresist compositions comprising mixtures or two or more copolymers of formula 1 or 2 allow formation of uniform sized patterns.
```wherein
```R1 is H; (C1-C10) alkyl or aryl; and
```the ratio of a:b is 20 80 mol% : 80 20mol%.
and
wherein
```R2 is an acid labile protecting group; and
```the ratio of c:d:e is 30 70 mol% : 28 50mol% : 2 15mol%.