METHOD FOR MANUFACTURING BURIED CONTACT

摘要

PURPOSE: A fabrication method of a buried contact of a latch structure of a sense AMP and an SRAM is provided to reduce contact resistance and to simplify the manufacturing process. CONSTITUTION: After forming a gate oxide(302) on a semiconductor substrate(301), a polysilicon layer(303) is deposited on the gate oxide. A buried contact region is defined by selectively etching the polysilicon layer(303) to expose the surface of the gate oxide(302) using a photoresist pattern. A heavily doped impurity region(305) is formed in the semiconductor substrate(301) using the photoresist pattern as a mask. Using the photoresist pattern, the exposed oxide layer(302) is selectively removed to expose the substrate(301). After removing the photoresist pattern, a polycide layer(306) is formed on the resultant structure.