PROCESSING METHOD OF SEMICONDUCTOR SUBSTRATE AND ION IMPLANTATION SYSTEM

摘要

PURPOSE: A processing method of a semiconductor substrate and an ion implantation system are provided to measure accurately an implanted dose by improving an in-situ measurement of dose. CONSTITUTION: A product wafer and a monitor wafer are loaded on a disk of a vacuum chamber of an ion implantation system(101). The product wafer and the monitor wafer are implanted an ion implantation system(102). The implantation process is stopped when a desired dose is measured by a Faraday cup(103). The monitor wafer is moved to an annealing and measuring station of a vacuum system(104). A rapid annealing process for the monitor wafer is performed during 30 seconds under a temperature of 700 degrees centigrade(105). A variable of the monitor wafer related to an implanted dose is measured by the annealing and measuring station(106). The variable of the monitor wafer compares with the implanted dose(107). All processes are finished if the implanted dose is equal to or more than the desired doze(108,109). An initial dose is handled(110).