DECOUPLING CAPACITOR AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A decoupling capacitor and a method for fabricating the same are provided to improve a switching speed of a circuit including a decoupling capacitor by using a body region of high density. CONSTITUTION: A semiconductor region(102) is formed on a substrate(104). The semiconductor region(102) is separated from a bulk silicon region(110) of the substrate(104) by a lower insulating layer(106). A gate structure(112) is formed on a channel region(114) of a body region(116) of the semiconductor region(102). The first and the second diffusion regions(118,120) are formed within the semiconductor region(102). The gate structure(112) is formed by an epitaxial layer(122) formed on the channel region(114), a gate oxide(124) formed on the epitaxial layer(122), a polysilicon layer(126) formed on the gate oxide(124), and the first silicide contact(128) formed on the polysilicon layer(126). The second silicide contact(130) is formed on the first diffusion region(118). The second silicide contact(130) is separated from the gate structure(112) by the first spacer(132). The third silicide contact(134) is formed on the second diffusion region(120). The third silicide contact(134) is separated from the gate structure(112) by the second spacer(136).