SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION

摘要

PURPOSE: To shorten the turn on time of a thyristor constituting a protective circuit. CONSTITUTION: The parasitic PNPN thyristor TH of a thyristor protective element and a trigger element TR are provided on a semiconductor layer 4C formed on a buried insulation layer 4B. Trigger electrode (gate) of the parasitic PNPN thyristor TH and the back gate of the trigger element TR are provided in an identical p well 5P1 and connected electrically so that the parasitic PNPN thyristor TH is driven with a substrate current generated upon breakdown of the trigger element TR.