PLASMA CHEMICAL VAPOR DEPOSITION DEVICE WITH MULTIPLE VACUUM CHAMBERS FOR CARBON NANOTUBE SYNTHESIZATION AND SYNTHESIZING METHOD OF CARBON NANOTUBE USING THE DEVICE

摘要

PURPOSE: A method for synthesizing carbon nanotube using plasma chemical vapor deposition device with multiple vacuum chambers is provided to prevent secondary contamination of carbon nanotube occurring where within one chamber one reactive gas for etching catalyst layer and the other reactive gas for synthesizing carbon nanotube are alternatively used. CONSTITUTION: In one embodiment of the invention, a method for synthesizing carbon nanotube comprises steps of (i) thermal deposition of Co-Ni catalyst alloys on alumina substrate to 30nm in thickness; (ii) introduction of the alumina substrate into a low vacuum chamber with a robot arm; (iii) transfer of the alumina substrate to the 1st high vacuum chamber and put it on an electrode substrate, wherein the catalyst layer on the alumina substrate is changed into fine grain by plasma-etching as ammonia gas 200 sccm is supplied into the 1st high vacuum chamber inside temperature of which is controlled at about 500deg.C; (iv) transfer of the alumina substrate from the 1st high vacuum chamber to the low vacuum chamber; (v) transfer of the alumina substrate to the 2nd high vacuum chamber and put it on an electrode substrate, wherein carbon nanotube is synthesized on catalyst layer in the form of fine grain by generating plasma inside the 2nd high vacuum chamber as acetylene gas 100 sccm is supplied into the 2nd high vacuum chamber inside temperature of which is controlled at about 500deg.C.