| 摘要 |
<p>A thermal CVD apparatus (1) is provided with a substrate heating source which includes a reaction chamber (11) and an electromagnetic wave generator (12) connecting to the reaction chamber. Silicon substrates (51) are placed in the reaction chamber. The electromagnetic wave generator supplies electromagnetic waves to the reaction chamber to form a thin film on the front face of each silicon substrate. Alternatively, the thermal CVD apparatus may be provided with a cavity resonator for placing the substrates therein and the electromagnetic wave generator may be connected to the cavity resonator. <IMAGE></p> |
